Showing results 5 to 11 of 11
Impact of Si impurities in HfO2: Threshold voltage problems in poly-Si/HfO2 gate stacks Kim, DY; Kang, J; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1628 - 1632, 2006-06 |
p-type doping and compensation in ZnO Lee, WJ; Kang, J; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, pp.196 - 201, 2008-07 |
Reliability issues and role of defects in high-k dielectric HfO2 devices Kang, JG; Kim, DY; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, pp.552 - 557, 2007-03 |
Stability and electronic structure of aluminate nanotubes Kang, YJ; Hong, HM; Moon, CY; Chang, Kee-Joo; Kim, HJ, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, pp.1351 - 1354, 2006-06 |
The effects of surface polarity and dangling bonds on the electronic properties of monolayer and bilayer MoS2 on alpha-quartz Sung, Ha Jun; Choe, Duk Hyun; Chang, Kee-Joo, NEW JOURNAL OF PHYSICS, v.16, pp.113055 - 113055, 2014-11 |
The electronic and magnetic properties of carbon nanotubes interacting with iron atoms Kang, YJ; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.376, pp.311 - 315, 2006-04 |
The origin of p-type conductivity in P-doped ZnO Lee, WJ; Kang, JG; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, pp.602 - 607, 2007-03 |
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