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The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In-Ga-Zn-O thin film transistors![]() Oh, Young Jun; Noh, Hyeon-Kyun; Chang, Kee Joo, SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, v.16, no.3, pp.034902 - 034902, 2015-06 |
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