Showing results 1 to 4 of 4
Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations Choi, Eun-Ae; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.94, no.12, pp.122901 - 122901, 2009-03 |
Electronic structures of oxygen-deficient Ta2O5 Yang, Yong; Nahm, Ho-Hyun; Sugino, Osamu; Ohno, Takahisa, AIP ADVANCES, v.3, no.4, 2013-04 |
Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4 Noh, Hyeon-Kyun; Ryu, Byungki; Choi, Eun-Ae; Bang, Junhyeok; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.95, no.8, pp.082905 - 082905, 2009-08 |
Reconstruction and alignment of vacancies in carbon nanotubes Lee, Alex Taekyung; Kang, Yong-Ju; Chang, Kee-Joo; Lee, In-Ho, PHYSICAL REVIEW B, v.79, pp.174105 - 174105, 2009-05 |
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