Stress-Released Layer Formed by Pulsed Ruby Laser Annealing on GaAs-on-Si
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Y. Kim | ko |
| dc.contributor.author | et. al. | ko |
| dc.contributor.author | Kim, Jae Kwan | ko |
| dc.contributor.author | Choochon Lee | ko |
| dc.date.accessioned | 2013-02-25T12:44:53Z | - |
| dc.date.available | 2013-02-25T12:44:53Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990-04 | - |
| dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.67, no.7, pp.3358 - 3361 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/62278 | - |
| dc.language | English | - |
| dc.publisher | Amer Inst Physics | - |
| dc.title | Stress-Released Layer Formed by Pulsed Ruby Laser Annealing on GaAs-on-Si | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1990CV63900022 | - |
| dc.identifier.scopusid | 2-s2.0-33847494351 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 67 | - |
| dc.citation.issue | 7 | - |
| dc.citation.beginningpage | 3358 | - |
| dc.citation.endingpage | 3361 | - |
| dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
| dc.identifier.doi | 10.1063/1.345374 | - |
| dc.contributor.nonIdAuthor | Y. Kim | - |
| dc.contributor.nonIdAuthor | et. al. | - |
| dc.type.journalArticle | Article | - |
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