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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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The effects of C and F impurities on the Schottky barrier height and effective work function at TiN/HfO2 interface Kim, Geun Myeong; Oh, Young-Jun; Chang, Kee-Joo, The 17th Asian Workshop on First-Principles Electronic Structure Calculations, KIAS, 2014-11-05 | |
Boron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 2014 APS March Meeting, APS, 2014-03 | |
Migration Pathways and Barriers for B diffusion at Si/SiO2 and SiGe/SiO2 Interface Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 32nd International Conference on the Physics of Semiconductors, ICPS, 2014-08 |
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