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Results 1-3 of 3 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
The effects of C and F impurities on the Schottky barrier height and effective work function at TiN/HfO2 interface

Kim, Geun Myeong; Oh, Young-Jun; Chang, Kee-Joo, The 17th Asian Workshop on First-Principles Electronic Structure Calculations, KIAS, 2014-11-05

2
Boron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces

Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 2014 APS March Meeting, APS, 2014-03

3
Migration Pathways and Barriers for B diffusion at Si/SiO2 and SiGe/SiO2 Interface

Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 32nd International Conference on the Physics of Semiconductors, ICPS, 2014-08

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