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Results 1-10 of 16 (Search time: 0.004 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Atomic and Electronic Structures of Amorphous Zinc Tin Oxides Ryu, B.; Chang, Kee-Joo, International Conference on Core Research and Engineering Science of Advanced Materials, 2010 | |
| Hole Carriers Induced by Defects in Ge/Si Core-Shell Nanowires Park, J.-S.; Ryu, B.; Moon, C.-Y.; Chang, Kee-Joo, International Conference on Core Research and Engineering Science of Advanced Materials, 2010 | |
| The role of O-vacancy in Negative Bias Illumination Stress Instability in amoprhous In-Ga-Zn-O TFTs Ryu, B.; Noh, H.-K.; Choi, E.-A.; Chang, Kee-Joo, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2010-10 | |
| First-principles study on boron segregation at Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 한국물리학회 가을학술논문발표회, 한국물리학회, 2010-10 | |
| Origin of the hole gas in Ge/Si core-shell nanowires Park, J.-S.; Ryu, B.; Moon, C.-Y.; Chang, Kee-Joo, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2010-04 | |
| Electronic structure of donor-pair defects in Si1-xGex alloy nanowires Park, J.-S.; Ryu, B.; Chang, Kee-Joo, The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06 | |
| Electronic structure of O-vacancy in amorphous zinc tin oxide Ryu, B.; Chang, Kee-Joo, 30th International Conference on the Physics of Semiconductors, 2010-07 | |
| The electronic structure of oxygen vacancy in amorphous HfSiO_4 Noh, H.-K.; Ryu, B.; Bang, J.; Chang, Kee-Joo; Choi, E.-A., 30th International Conference on the Physics of Semiconductors, 2010-07 | |
| The electronic structure of O-vacancy at the interface between Si and HfO_2 Ryu, B.; Chang, Kee-Joo, 2010 March Meeting of the American Physical Society, American Physical Society, 2010-03 | |
| Segregation of B dopants in Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06 |
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