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Results 1-10 of 12 (Search time: 0.006 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| The electronic structure of Si impurities in HfO2 Chang, Kee-Joo; Kim, D.-Y.; Kang, J., 8th Asian Workshop on First-Principles Electronic Structure Calculations, 2005 | |
| Defect properties of Si impurities in HfO2: a physical origin of the threshold voltage problem in hafnium-based MOS devices Chang, Kee-Joo; Kim, D.Y.; Kang, J., 한국물리학회 가을학술논문발표회 , pp.547 - 547, 한국물리학회, 2005-10 | |
| Atomic and electronic structure of Si impurities in HfO2 Chang, Kee-Joo; Kim, D.Y.; Kang, J., 한국물리학회 봄 학술논문발표회 , pp.78 - 78, 한국물리학회, 2005-04 | |
| The magnetic Properties of Mn-based binary compounds Chang, Kee-Joo; Kang, Y.-J.; Hong, H.-M.; Kang, J.; Lee, E.-C., 8th Asian Workshop on First-Principles Electronic Structure Calculations, 2005 | |
| Hydrogen electrochemistry in amorphous SiO2 and at Si-SiO2 interfaces Chang, Kee-Joo; Kang, J., 한국물리학회 가을학술논문발표회 , pp.419 - 419, 한국물리학회, 2005-10 | |
| The effect of Mn layer on cubic GaN growth Chang, Kee-Joo; Choi, E.-A.; Kang, J., 한국물리학회 가을학술논문발표회 , pp.457 - 457, 한국물리학회, 2005-10 | |
| Defect properties and doping efficiency in P-doped ZnO Chang, Kee-Joo; Lee, W.-J.; Kang, J., 3rd ZnO Workshop, 2005-10-07 | |
| The impact of Si impurities in HfO2 Kim, DY; Kang, J; Chang, Kee-Joo, The International Conference on Advanced Materials and Devices, ICAMD, 2005-12 | |
| Mechanism for p-type conductance in Mn δ-doped GaN: first-principles study Chang, Kee-Joo; Kang, J., 한국물리학회 봄 학술논문발표회 , pp.197 - 197, 한국물리학회, 2005-04 | |
| The origin of p-type conductivity in Mn δ-doped GaN Chang, Kee-Joo; Kang, J., 8th Asian Workshop on First-Principles Electronic Structure Calculations, 2005 |
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