Showing results 1 to 4 of 4
Boron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 2014 APS March Meeting, APS, 2014-03 |
Effect of interface Ge atoms on the segregation of B dopants in SiGe/SiO2 interface 이창휘; 오영준; 김근명; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10 |
Electronic structure and diffusion of B dopants in SiGe/SiO2 interface 이창휘; 오영준; 김근명; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06 |
Migration Pathways and Barriers for B diffusion at Si/SiO2 and SiGe/SiO2 Interface Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 32nd International Conference on the Physics of Semiconductors, ICPS, 2014-08 |
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