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Showing results 19 to 36 of 36

19
H-related Defects Complexes in HfO2: a Model for Positive Fixed Charge Defects

Chang, Kee-Joo; Kang, J.; Lee, E.-C.; Jin, Y.-G., 7th Asian Workshop on First-Principles Electronic Structure Calculations, 2004-11

20
Hydrogen electrochemistry in amorphous SiO2 and at Si-SiO2 interfaces

Chang, Kee-Joo; Kang, J., 한국물리학회 가을학술논문발표회 , pp.419 - 419, 한국물리학회, 2005-10

21
Issues and first-principles calculations in Si-based nanoscale devices

Chang, Kee-Joo; Kang, J.; Choi, E.-A.; Kim, Y.-H., The 4th Conference of the Asian Consortium on Computational Materials Science , ACCMS-4, 2007-09

22
Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films

Jeon, H.C.; Kang, T.W.; Kim, T.W.; Kang, J.; Chang, Kee-Joo, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, pp.400 - 401, IEEE, 2006-10-22

23
Magnetic properties of Co-doped ZnO nanowires

Chang, Kee-Joo; Choi, E.-A; Lee, W. J.; Kang, J., The 13th International Conference on II-VI Compounds, 2007-09

24
Mechanism for Acceptor Compensation and Efficient p-type Doping in ZnO

Chang, Kee-Joo; Lee, E.-C.; Lee, W.-J.; Kang, J., 27th Korean Vacuum Society Meeting, Korean Vacuum Society, 2004

25
Mechanism for p-type conductance in Mn δ-doped GaN: first-principles study

Chang, Kee-Joo; Kang, J., 한국물리학회 봄 학술논문발표회 , pp.197 - 197, 한국물리학회, 2005-04

26
Role of defects on direct electron tunneling through ultra-thin SiO_2

Chang, Kee-Joo; Kang, J.; Bang, J.; Kim, Y.-H., The 24th International Conference on Defects in Semiconductors, 2007-05

27
The Defect Properties of Phosphorus Dopants in ZnO

Chang, Kee-Joo; Lee, W.-J.; Kang, J., 7th Asian Workshop on First-Principles Electronic Structure Calculations, 2004-11

28
The effect of Mn ions on the growth of cubic GaN

Choi, E.; Kang, J.; Chang, Kee-Joo, 28th International Conference on the Physics of Semiconductors, , pp.21 - 22, ICPS, 2006-07-24

29
The effect of Mn layer on cubic GaN growth

Chang, Kee-Joo; Choi, E.-A.; Kang, J., 한국물리학회 가을학술논문발표회 , pp.457 - 457, 한국물리학회, 2005-10

30
The electronic structure of Ga-vacancy in Mn-doped GaN

Kang, J.; Chang, Kee-Joo, 34th International Symposium on Compound Semiconductors, ISCS-2007, pp.3035 - 3037, 2007-10-15

31
The electronic structure of graphene layers on SiO2 substrate

Chang, Kee-Joo; Kang, Y.-J.; Kang, J., 2008 March Meeting of the American Physical Society, American Physical Society, 2008-03

32
The electronic structure of Si impurities in HfO2

Chang, Kee-Joo; Kim, D.-Y.; Kang, J., 8th Asian Workshop on First-Principles Electronic Structure Calculations, 2005

33
The magnetic Properties of Mn-based binary compounds

Chang, Kee-Joo; Kang, Y.-J.; Hong, H.-M.; Kang, J.; Lee, E.-C., 8th Asian Workshop on First-Principles Electronic Structure Calculations, 2005

34
The origin of p-type conductivity in Mn δ-doped GaN

Chang, Kee-Joo; Kang, J., 8th Asian Workshop on First-Principles Electronic Structure Calculations, 2005

35
The structural and electronic properties of graphene layers on SiO2 substrates

Chang, Kee-Joo; Kang, Y.-J.; Kang, J., The 10th Asian Workshop on First-Principles Electronic Structure Calculations, 2007-10

36
The structural properties of single crystalline InGa3(ZnO)m

Chang, Kee-Joo; Lee, W. J.; Choi, E,-A.; Kang, J.; Ryu, B., 한국물리학회 가을학술논문발표회, 한국물리학회, 2008-10

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