Showing results 3 to 8 of 8
Effects of carrier localization on the optical characteristics of MOCVD-grown InGaN/GaN heterostructrues Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ; Keller, S; Denbaars, SP; et al, The 3rd International Conference on Nitride Semiconductors (ICNS-3), 1999 |
High-power optical probe for optical recording Jung, ST; Lee, CW; Kim, DS; Shin, DJ; Lee, Yong-Hee, ISOM 2000, ISOM, 2000 |
Low temperature near-field scanning optical spectroscopy of semiconductor nanostructures Eah, SK; Hhong, SC; Park, JH; Cho, Yong-Hoon; Kim, DS; Jhe, W, , 1999 |
Optical characteristics of AlGaN, GaN, and InGaN thin films: a comparison and temperature dependence Cho, Yong-Hoon; Schmidt, TJ; Gainer, GH; Lam, JB; Song, JJ; Keller, S; Denbaars, SP; et al, The 3rd International Conference on Nitride Semiconductors (ICNS-3), pp.77 -, 1999 |
Optical emission characteristics of GaAs and GaN structures using low temperature near-field scanning optical spectroscopy Cho, Yong-Hoon; Eah, SK; Hohng, SC; Kim, DS; Yang, GM; Song, JJ; Jhe, W, Pacific Rim’99, Technical Digest, pp.999 -, 1999 |
Photoreflectance spectroscopy and imaging of quantum structures using near-field scanning optical microscope Cho, Yong-Hoon; Eah, SK; Hohng, SC; Kim, DS; Jhe, W, pp.99 -, 1999 |
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