Showing results 1 to 10 of 10
Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells Schmidt, TJ; Bidnyk, S; Cho, Yong-Hoon; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; et al, Mat. Res. Soc. Symp. Proc., 1998 |
Characterization of InGaN/GaN lasing structures for high temperature device applications Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, Proceedings of Conference on Laser and Electro-Optics (CLEO)/IQEC’98, OSA Technical Digest Series, pp.223 -, 1998 |
Comparison study of structural and optical properties of InxGa1-xN/GaN quantum wells with different In compositions Kwon, YH; Gainer, GH; Bidnyk, S; Cho, Yong-Hoon; Song, JJ; Hansen, M; Denbaars, SP, Mat. Res. Soc. Symp. Proc, 2000 |
Critical issues of localization in the development of InGaN/GaN laser diodes Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Gainer, GH; Song, JJ; Keller, S; Denbaars, SP; et al, pp.286 -, 1999 |
Effects of carrier localization on the optical characteristics of MOCVD-grown InGaN/GaN heterostructrues Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ; Keller, S; Denbaars, SP; et al, The 3rd International Conference on Nitride Semiconductors (ICNS-3), 1999 |
Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, , 1998 |
Nonlinear optical spectroscopy of band tail states in highly excited InGaN Schmidt, TJ; Cho, Yong-Hoon; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, pp.57 -, 1999 |
Optical Characteristics of Group III-Nitride Quantum Structures Cho, Yong-Hoon; Jhe, W; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ, Proceedings of the 3rd Korea-China Joint Workshop on Advanced Materials, pp.351 -, 1999 |
Room temperature laser action in laterally overgrown GaN pyramids on (111) silicon Bidnyk, S; Little, BD; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, Mat. Res. Soc., 1998 |
Study of stimulated emission in InGaN/GaN multiquantum wells in the temperature range of 175-575 K Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Krasinski, J; Song, JJ; Keller, S; Mishra, UK; et al, Mat. Res. Soc., 1998 |
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