Showing results 5 to 10 of 10
Effects of carrier localization on the optical characteristics of MOCVD-grown InGaN/GaN heterostructrues Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ; Keller, S; Denbaars, SP; et al, The 3rd International Conference on Nitride Semiconductors (ICNS-3), 1999 |
Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, , 1998 |
Nonlinear optical spectroscopy of band tail states in highly excited InGaN Schmidt, TJ; Cho, Yong-Hoon; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, pp.57 -, 1999 |
Optical Characteristics of Group III-Nitride Quantum Structures Cho, Yong-Hoon; Jhe, W; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ, Proceedings of the 3rd Korea-China Joint Workshop on Advanced Materials, pp.351 -, 1999 |
Room temperature laser action in laterally overgrown GaN pyramids on (111) silicon Bidnyk, S; Little, BD; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, Mat. Res. Soc., 1998 |
Study of stimulated emission in InGaN/GaN multiquantum wells in the temperature range of 175-575 K Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Krasinski, J; Song, JJ; Keller, S; Mishra, UK; et al, Mat. Res. Soc., 1998 |
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