X-RAY AND DLTS CHARACTERIZATIONS OF INXGA1-X AS(X-LESS-THAN-0.03)/GAAS LAYERS GROWN BY VPE USING AN IN/GA ALLOY SOURCE
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | KIM, HS | ko |
| dc.contributor.author | KIM, EK | ko |
| dc.contributor.author | MIN, SK | ko |
| dc.contributor.author | Lee, Choochon | ko |
| dc.date.accessioned | 2013-02-25T11:53:14Z | - |
| dc.date.available | 2013-02-25T11:53:14Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1989-08 | - |
| dc.identifier.citation | APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, v.49, no.2, pp.143 - 147 | - |
| dc.identifier.issn | 0947-8396 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/62013 | - |
| dc.language | English | - |
| dc.publisher | SPRINGER VERLAG | - |
| dc.title | X-RAY AND DLTS CHARACTERIZATIONS OF INXGA1-X AS(X-LESS-THAN-0.03)/GAAS LAYERS GROWN BY VPE USING AN IN/GA ALLOY SOURCE | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1989AG02500003 | - |
| dc.identifier.scopusid | 2-s2.0-0024715035 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 49 | - |
| dc.citation.issue | 2 | - |
| dc.citation.beginningpage | 143 | - |
| dc.citation.endingpage | 147 | - |
| dc.citation.publicationname | APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING | - |
| dc.identifier.doi | 10.1007/BF00616292 | - |
| dc.contributor.nonIdAuthor | KIM, HS | - |
| dc.contributor.nonIdAuthor | KIM, EK | - |
| dc.contributor.nonIdAuthor | MIN, SK | - |
| dc.type.journalArticle | Article | - |
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