Solid phase epitaxial growth of GaAs on Si substrates
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | CHO, KI | ko |
| dc.contributor.author | CHOO, WK | ko |
| dc.contributor.author | Park, Sin Chong | ko |
| dc.contributor.author | NISHINAGA, T | ko |
| dc.contributor.author | LEE, BT | ko |
| dc.date.accessioned | 2013-02-25T11:42:51Z | - |
| dc.date.available | 2013-02-25T11:42:51Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990-01 | - |
| dc.identifier.citation | APPLIED PHYSICS LETTERS, v.56, no.5, pp.448 - 450 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/61949 | - |
| dc.language | English | - |
| dc.publisher | Amer Inst Physics | - |
| dc.title | Solid phase epitaxial growth of GaAs on Si substrates | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1990CL02600014 | - |
| dc.identifier.scopusid | 2-s2.0-0040174995 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 56 | - |
| dc.citation.issue | 5 | - |
| dc.citation.beginningpage | 448 | - |
| dc.citation.endingpage | 450 | - |
| dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
| dc.identifier.doi | 10.1063/1.102761 | - |
| dc.contributor.localauthor | Park, Sin Chong | - |
| dc.contributor.nonIdAuthor | CHO, KI | - |
| dc.contributor.nonIdAuthor | CHOO, WK | - |
| dc.contributor.nonIdAuthor | NISHINAGA, T | - |
| dc.contributor.nonIdAuthor | LEE, BT | - |
| dc.type.journalArticle | Article | - |
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