Formation of Shallow p+ -n Junctions Using Boron-Nitride Solid Diffusion Source
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | K.T.Kim | ko |
| dc.contributor.author | Kim, Choong Ki | ko |
| dc.date.accessioned | 2013-02-25T11:38:09Z | - |
| dc.date.available | 2013-02-25T11:38:09Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1987-12 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.8, no.12, pp.569 - 571 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/61925 | - |
| dc.language | English | - |
| dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
| dc.title | Formation of Shallow p+ -n Junctions Using Boron-Nitride Solid Diffusion Source | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1987K965800005 | - |
| dc.identifier.scopusid | 2-s2.0-0023565338 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 8 | - |
| dc.citation.issue | 12 | - |
| dc.citation.beginningpage | 569 | - |
| dc.citation.endingpage | 571 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.contributor.nonIdAuthor | K.T.Kim | - |
| dc.type.journalArticle | Article | - |
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