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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Creation and annihilation of single atom vacancy during subsurface diffusion Choi, J; Lim, DK; Kim, Y; Kim, DH; Kim, Sehun, PHYSICAL REVIEW B, v.82, no.20, 2010-11
2	Formation of hexagonal Gd disilicide nanowires on Si(100) Lee, D; Kim, Sehun, APPLIED PHYSICS LETTERS, v.82, no.16, pp.2619 - 2621, 2003-04
3	Unidirectional hexagonal rare-earth disilicide nanowires on vicinal Si(100)-2x1 Lee, D; Lim, DK; Bae, SS; Kim, Sehun; Ragan, R; Ohlberg, DAA; Chen, Y; Williams, RS, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.80, no.6, pp.1311 - 1313, 2005-03
4	Structure and electronic properties of self-assembled Pt silicide nanowires on Si(100) Lim, DK; Lee, D; Lee, H; Bae, SS; Choi, J; Kim, Sehun; Ji, CX; Ragan, R; Ohlberg, DAA; Chang, YA; Williams, RS, NANOTECHNOLOGY, v.18, no.9, pp.649 - 657, 2007-03
5	Surface reconstruction of Pt/Si(001) Ji, C; Ragan, R; Kim, Sehun; Chang, YA; Chen, Y; Ohlberg, DAA; Williams, RS, APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, v.80, no.6, pp.1301 - 1304, 2005-03
6	Subsurface Incorporation of Co Atoms into Si(100) Choi, J; Kim, YW; Lim, DK; Kim, DH; Kim, Sehun, JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.31, pp.15467 - 15470, 2011-08

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