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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Metal-dependent Fermi-level movement in the metal/sulfur-passivated InGaP contact Kim, YK; Kim, Sehun; Seo, JM; Ahn, S; Kim, KJ; Kang, TH; Kim, B, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.15, no.3, pp.1124 - 1128, 1997 | |
| PREPARATION OF ALUMINUM NITRIDE THIN-FILMS USING SINGLE PRECURSOR OMCVD Park, Joon Taik; LEE, JK; Kim, Sehun; SUNG, MM; KIM, Y, BULLETIN OF THE KOREAN CHEMICAL SOCIETY, v.14, no.2, pp.163 - 164, 1993-04 | |
| Molecular orbital studies of bonding characters of Al-N, Al-C, and N-C bonds in organometallic precursors to AlN thin films Lee, KH; Park, SS; Lee, HM; Park, SJ; Park, HS; Lee, Yoon Sup; Kim, Y; Kim, Sehun; Jo, CG; Eun, HM, BULLETIN OF THE KOREAN CHEMICAL SOCIETY, v.19, no.12, pp.1314 - 1319, 1998-12 |
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