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Relaxation of the Si lattice strain in the Si(001)-SiO2 interface by annealing in N2O

Ha, YH; Kim, Sehun; Lee, SY; Kim, JH; Baek, DH; Kim, HK; Moon, DW, APPLIED PHYSICS LETTERS, v.74, no.23, pp.3510 - 3512, 1999-06

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