Browse "NE-Journal Papers(저널논문)" by Author WILDERMUTH, D

Showing results 1 to 9 of 9

1
AMORPHOUS-SILICON BASED RADIATION DETECTORS

PEREZMENDEZ, V; Cho, Gyuseong; DREWERY, J; JING, T; KAPLAN, SN; QURESHI, S; WILDERMUTH, D; et al, JOURNAL OF NON-CRYSTALLINE SOLIDS, v.137, pp.1291 - 1296, 1991-12

2
AMORPHOUS-SILICON PIXEL ARRAYS

DREWERY, JS; Cho, Gyuseong; FUJIEDA, I; JING, T; KAPLAN, SN; PEREZMENDEZ, V; WILDERMUTH, D; et al, NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.310, no.1-2, pp.165 - 170, 1991-12

3
AMORPHOUS-SILICON PIXEL LAYERS WITH CESIUM IODIDE CONVERTERS FOR MEDICAL RADIOGRAPHY

JING, T; GOODMAN, CA; DREWERY, J; Cho, Gyuseong; HONG, WS; LEE, H; KAPLAN, SN; et al, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.41, no.4, pp.903 - 909, 1994-08

4
AMORPHOUS-SILICON PIXEL RADIATION DETECTORS AND ASSOCIATED THIN-FILM-TRANSISTOR ELECTRONICS READOUT

PEREZMENDEZ, V; Cho, Gyuseong; DREWERY, J; JING, T; KAPLAN, SN; MIRESHGHI, A; WILDERMUTH, D; et al, NUCLEAR PHYSICS B SUPPLEMENT: 32, pp.287 - 295, 1993-05

5
AMORPHOUS-SILICON POSITION-SENSITIVE NEUTRON DETECTOR

MIRESHGHI, A; Cho, Gyuseong; DREWERY, J; JING, T; KAPLAN, SN; PEREZMENDEZ, V; WILDERMUTH, D, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.39, no.4, pp.635 - 640, 1992-08

6
ENHANCED COLUMNAR STRUCTURE IN CSI LAYER BY SUBSTRATE PATTERNING

JING, T; Cho, Gyuseong; DREWERY, J; FUJIEDA, I; KAPLAN, SN; MIRESHGHI, A; PEREZMENDEZ, V; et al, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.39, no.5, pp.1195 - 1198, 1992-10

7
NOISE IN A-SI-H P-I-N DETECTOR DIODES

Cho, Gyuseong; QURESHI, S; DREWERY, JS; JING, T; KAPLAN, SN; LEE, H; MIRESHGHI, A; et al, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.39, no.4, pp.641 - 644, 1992-08

8
SIGNAL READOUT IN A-SIH PIXEL DETECTORS

Cho, Gyuseong; DREWERY, JS; HONG, WS; JING, T; KAPLAN, SN; LEE, H; PEREZMENDEZ, V; et al, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.40, no.4, pp.323 - 327, 1993-08

9
X-RAY AND CHARGED-PARTICLE DETECTION WITH CSI(TL) LAYER COUPLED TO A-SI-H PHOTODIODE LAYERS

FUJIEDA, I; Cho, Gyuseong; DREWERY, J; GEE, T; JING, T; KAPLAN, SN; PEREZMENDEZ, V; et al, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.38, no.2, pp.255 - 262, 1991-04

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