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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)

MS-Journal Papers(저널논문)

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Collection's Items (Sorted by Submit Date in Descending order): 2521 to 2540 of 7246

2521
Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chun-Won; Jung, Soon-Won; Ryu, Min-Ki; Park, Sang-Hee Ko; Kim, ByeongHoon; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.26, no.3, 2011-03

2522
Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric

Bentley, Steven J.; Holland, Martin; Li, Xu; Paterson, Gary W.; Zhou, HP; Ignatova, Olesya; Thoms, Stephen; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.494 - 496, 2011-04

2523
A Distributed Model for Border Traps in Al2O3 - InGaAs MOS Devices

Yuan, Yu; Wang, Lingquan; Yu, Bo; Shin, Byungha; Ahn, Jaesoo; McIntyre, Paul C.; Asbeck, Peter M.; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.485 - 487, 2011-04

2524
Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate

Yoon, Sung-Min; Jung, Soon-Won; Yang, Shinhyuk; Park, Sang-Hee Ko; Yu, Byoung-Gon; Ishiwara, Hiroshi, CURRENT APPLIED PHYSICS, v.11, no.3, pp.219 - 224, 2011-05

2525
See-Through Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel

Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Cho, Doo-Hee; Ryu, Min-Ki; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.5, pp.1494 - 1499, 2011-05

2526
Band alignment at the Cu2ZnSn(SxSe1-x)(4)/CdS interface

Haight, Richard; Barkhouse, Aaron; Gunawan, Oki; Shin, Byungha; Copel, Matt; Hopstaken, Marinus; Mitzi, David B., APPLIED PHYSICS LETTERS, v.98, no.25, 2011-06

2527
III-V nMOSFETs - Some issues associated with roadmap worthiness (invited)

Thayne, Iain; Bentley, Steven; Holland, Martin; Jansen, Wout; Li, Xu; Macintyre, Douglas; Thoms, Stephen; et al, MICROELECTRONIC ENGINEERING, v.88, no.7, pp.1070 - 1075, 2011-07

2528
Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor

Yoon, Sung-Min; Yang, Shinhyuk; Ryu, Min-Ki; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.7, pp.2135 - 2142, 2011-07

2529
Effects of the composition of sputtering target on the stability of InGaZnO thin film transistor

Huh, Jun-Young; Jeon, Jae-Hong; Choe, Hee-Hwan; Lee, Kang-Woong; Seo, Jong-Huyn; Ryu, Min-Ki; Park, Sang-Hee Ko; et al, THIN SOLID FILMS, v.519, no.20, pp.6868 - 6871, 2011-08

2530
Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

Yang, Shinhyuk; Ji, Kwang Hwan; Kim, Un Ki; Hwang, Cheol Seong; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jang, Jin; et al, APPLIED PHYSICS LETTERS, v.99, no.10, 2011-09

2531
Light and bias stability of a-IGZO TFT fabricated by r.f. magnetron sputtering

Huh, Jun-Young; Seo, Seung-Bum; Park, Han-Sung; Jeon, Jae-Hong; Choe, Hee-Hwan; Lee, Kang-Woong; Seo, Jong-Huyn; et al, CURRENT APPLIED PHYSICS, v.11, no.5, pp.49 - 53, 2011-09

2532
Low-Temperature Processed Flexible In-Ga-Zn-O Thin-Film Transistors Exhibiting High Electrical Performance

Yang, Shinhyuk; Bak, Jun Yong; Yoon, Sung-Min; Ryu, Min Ki; Oh, Himchan; Hwang, Chi-Sun; Kim, Gi Heon; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.12, pp.1692 - 1694, 2011-12

2533
Three-Dimensional a-Si:H Solar Cells on Glass Nanocone Arrays Patterned by Self-Assembled Sn Nanospheres

Kim, Jeehwan; Hong, Augustin J.; Nah, Jae-Woong; Shin, Byungha; Ross, Frances M.; Sadana, Devendra K., ACS NANO, v.6, no.1, pp.265 - 271, 2012-01

2534
Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation

Oh, Himchan; Park, Sang-Hee Ko; Ryu, Min Ki; Hwang, Chi-Sun; Yang, Shinhyuk; Kwon, Oh Sang, ETRI JOURNAL, v.34, no.2, pp.280 - 283, 2012-04

2535
Electronic properties of the Cu2ZnSn(Se,S)(4) absorber layer in solar cells as revealed by admittance spectroscopy and related methods

Gunawan, Oki; Gokmen, Tayfun; Warren, Charles W.; Cohen, J. David; Todorov, Teodor K.; Barkhouse, D. Aaron R.; Bag, Santanu; et al, APPLIED PHYSICS LETTERS, v.100, no.25, 2012-06

2536
Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier

Shin, Byungha; Zhu, Yu; Bojarczuk, Nestor A.; Chey, S. Jay; Guha, Supratik, APPLIED PHYSICS LETTERS, v.101, no.5, 2012-07

2537
Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors

Bak, Jun Yong; Yoon, Sung Min; Yang, Shinhyuk; Kim, Gi Heon; Park, Sang-Hee Ko; Hwang, Chi-Sun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.4, 2012-07

2538
A Low-Power Scan Driver Circuit for Oxide TFTs

Pi, Jae-Eun; Ryu, MinKi; Hwang, Chi-Sun; Yang, ShinHyuk; Park, Sang-Hee Ko; Yoon, Sung-Min; Leem, HongKyun; et al, IEEE ELECTRON DEVICE LETTERS, v.33, no.8, pp.1144 - 1146, 2012-08

2539
Investigation of the Low-Frequency Noise Behavior and Its Correlation with the Subgap Density of States and Bias-Induced Instabilities in Amorphous InGaZnO Thin-Film Transistors with Various Oxygen Flow Rates

Jeong, Chan-Yong; Park, Ick-Joon; Cho, In-Tak; Lee, Jong-Ho; Cho, Euo-Sik; Ryu, Min Ki; Park, Sang-Hee Ko; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.10, 2012-10

2540
Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4 absorber

Shin, Byungha; Gunawan, Oki; Zhu, Yu; Bojarczuk, Nestor A.; Chey, S. Jay; Guha, Supratik, PROGRESS IN PHOTOVOLTAICS, v.21, no.1, pp.72 - 76, 2013-01

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