MS-Journal Papers(저널논문)

Recent Items

Collection's Items (Sorted by Submit Date in Descending order): 2481 to 2500 of 7246

2481
High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jeong, Jae Kyeong, APPLIED PHYSICS LETTERS, v.95, no.7, 2009-08

2482
Impact of device configuration on the temperature instability of Al-Zn-Sn-O thin film transistors

Jeong, Jae Kyeong; Yang, Shinhyuk; Cho, Doo-Hee; Park, Sang-Hee Ko; Hwang, Chi-Sun; Cho, Kyoung Ik, APPLIED PHYSICS LETTERS, v.95, no.12, 2009-09

2483
Electrical, structural and optical characterization of copper oxide thin films as a function of post annealing temperature

Figueiredo, V; Elangovan, E; Goncalves, G; Franco, N; Alves, E; Park, Sang-Hee ko; Martins, R; et al, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.206, no.9, pp.2143 - 2148, 2009-09

2484
Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors

Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jeong, Jae Kyeong, APPLIED PHYSICS LETTERS, v.95, no.17, 2009-10

2485
In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Singisetti, Uttam; Wistey, Mark A.; Burek, Gregory J.; Baraskar, Ashish K.; Thibeault, Brian J.; Gossard, Arthur C.; Rodwell, Mark J. W.; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.11, pp.1128 - 1130, 2009-11

2486
Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED

Cho, Doo-Hee; Park, Sang-Hee Ko; Byun, Chunwon; Ryu, Min Ki; Yang, Shinhyuk; Hwang, Chi-Sun; Yoon, Sung Min; et al, IEICE TRANSACTIONS ON ELECTRONICS, v.E92C, no.11, pp.1340 - 1346, 2009-11

2487
Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

Yoon, Sung-Min; Yang, Shin-Hyuk; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; et al, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.24, 2009-12

2488
Channel Protection Layer Effect on the Performance of Oxide TFTs

Park, Sang-Hee Ko; Cho, Doo-Hee; Yang, Shinhyuk; Ryu, Min Ki; Hwang, Chi-Sun; Yoon, Sung Min; Cheong, Woo-Seok; et al, ETRI JOURNAL, v.31, no.6, pp.653 - 659, 2009-12

2489
Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors

Cheong, Woo-Seok; Lee, Jeong-Min; Yoon, Sung Min; Lee, Jong-Ho; Yang, Shinhyuk; Chung, Sung Mook; Cho, Kyoung Ik; et al, ETRI JOURNAL, v.31, no.6, pp.660 - 666, 2009-12

2490
Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application

Hasan, Musarrat; Yun, Sun Jin; Koo, Jae Bon; Park, Sang Hee Ko; Kim, Yong Hae; Kang, Seung Youl; Rho, Jonghyun; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.3, pp.80 - 82, 2010

2491
Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

Yoon, Sung-Min; Yang, Shin-Hyuk; Jung, Soon-Won; Byun, Chun-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; Ishiwara, Hiroshi, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.5, pp.141 - 143, 2010

2492
Effect of Double-Layered Al2O3 Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

Yoon, Sung-Min; Park, Sang-Hee Ko; Yang, Shin-Hyuk; Byun, Chun-Won; Hwang, Chi-Sun, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.8, pp.264 - 267, 2010

2493
Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors

Yoon, Sung-Min; Yang, Shin-Hyuk; Byun, Chun-Won; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Kang, Seung-Youl; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.4, 2010

2494
Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

Yoon, Sung-Min; Park, Sang-Hee Ko; Byun, Chun-Won; Yang, Shin-Hyuk; Hwang, Chi-Sun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.7, pp.727 - 733, 2010

2495
Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

Yoon, Sung-Min; Byun, Chun-Won; Yang, Shinhyuk; Park, Sang-Hee Ko; Cho, Doo-Hee; Jung, Soon-Won; Kang, Seung-Youl; et al, IEEE ELECTRON DEVICE LETTERS, v.31, no.2, pp.138 - 140, 2010-02

2496
High-Performance Al-Sn-Zn-In-O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

Yang, Shinhyuk; Cho, Doo-Hee; Ryu, Min Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jang, Jin; Jeong, Jae Kyeong, IEEE ELECTRON DEVICE LETTERS, v.31, no.2, pp.144 - 146, 2010-02

2497
Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

Tabbal, Malek; Kim, Taegon; Woolf, David N.; Shin, Byungha; Aziz, Michael J., APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.98, no.3, pp.589 - 594, 2010-03

2498
Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 degrees C

Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chunwon; Park, Sang-Hee K.; Cho, Doo-Hee; Jung, Soon-Won; Kwon, Oh-Sang; et al, ADVANCED FUNCTIONAL MATERIALS, v.20, no.6, pp.921 - 926, 2010-03

2499
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Shin, Byungha; Weber, Justin R.; Long, Rathnait D.; Hurley, Paul K.; Van de Walle, Chris G.; McIntyre, Paul C., APPLIED PHYSICS LETTERS, v.96, no.15, 2010-04

2500
Improvement in the photon-induced bias stability of Al-Sn-Zn-In-O thin film transistors by adopting AlOx passivation layer

Yang, Shinhyuk; Cho, Doo-Hee; Ryu, Min Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; Jang, Jin; Jeong, Jae Kyeong, APPLIED PHYSICS LETTERS, v.96, no.21, 2010-05

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