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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Fluorinated silicon nitride film for the bottom antireflective layer in quarter micron optical lithography Jun, BH; Han, SS; Lee, JS; Kim, YB; Kang, HY; Koh, YB; Bae, Byeong-Soo; No, Kwangsoo, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.12, no.7, pp.921 - 926, 1997-07 | |
| Titanium oxide film for the bottom antireflective layer in deep ultraviolet lithography Jun, BH; Han, SS; Kim, KS; Lee, JS; Jiang, ZT; Bae, Byeong-Soo; No, Kwangsoo; Kim, DW; Kang, HY; Koh, YB, APPLIED OPTICS, v.36, no.7, pp.1482 - 1486, 1997-03 | |
| Optical and electrical properties of amorphous thin films in GexTe1-x system Kim, TK; Han, SS; Bae, Byeong-Soo, METALS AND MATERIALS-KOREA, v.5, no.1, pp.33 - 37, 1999-02 | |
| Preparation of a-SiNx thin film with low hydrogen content by inductively coupled plasma enhanced chemical vapor deposition Han, SS; Jun, BH; No, Kwangsoo; Bae, Byeong-Soo, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.145, no.2, pp.652 - 658, 1998-02 |
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