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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| 반응성 RF 마그네트론 스퍼터링 법으로 증착된 AIN 박막의 우선 배향성 및 표면 탄성파 특성에 관한 연구 서주원; 이원종, 한국재료학회지, v.7, no.6, pp.510 - 516, 1997-04 | |
| CHANGE OF THE CRITICAL THICKNESS IN THE PREFERRED ORIENTATION OF TIN FILMS OH, UC; JE, JH; Lee, JeongYong, JOURNAL OF MATERIALS RESEARCH, v.10, no.3, pp.634 - 639, 1995-03 | |
| Fabrication of thin film transistors using a Si/Si1-xGex/Si triple layer film on a SiO2 substrate Kim, JH; Lee, JeongYong; Kim, HS; Song, YH; Nam, KS, IEEE ELECTRON DEVICE LETTERS, v.17, no.5, pp.205 - 207, 1996-05 | |
| 마이크로파 플라즈마 CVD 방법으로 Si,Inconel 600 및 Steel 모재위에 증착된 다이아몬드 박막의 증착특성 김현호; 김흥회; 이원종; 김홍희, 한국표면공학회지, v.28, no.3, pp.133 - 141, 1995-04 | |
| Structural properties of Pt/p-InP heterostructures Kim, TW; Yoon, YS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.69, no.7, pp.972 - 974, 1996-08 | |
| nconel 600위에 증착된 TiN 박막의 고온 NaCl 수용액에서의 CPP 실험에 의한 핏팅저항성의 연구 김용일; 정한섭; 김홍회; 이원종, JOURNAL OF THE KOREAN CERAMIC SOCIETY, v.32, no.11, pp.1301 - 1307, 1995-04 | |
| ECR 산소 플라즈마에 의한 SiO2 박막의 성장 거동 및 전기적 특성 안성덕; 이원종, 한국세라믹학회지, v.32, no.3, pp.371 - 377, 1995-04 | |
| Epitaxial growth of GaN on LaAlO3(100) substrate by RF plasma assisted molecular beam epitaxy Lee, JJ; Kang, KY; Park, YS; Yang, CS; Kim, HS; Kim, KH; Kang, TW; Park, SH; Lee, JeongYong, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.38, no.11, pp.6487 - 6488, 1999-11 | |
| THE EFFECT OF IN-SITU BORON DOPING ON THE STRAIN RELAXATION OF SI0.8GE0.2-B/SI HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY LEE, SC; YUN, SJ; Lee, JeongYong, JOURNAL OF CRYSTAL GROWTH, v.150, no.1-4, pp.999 - 1004, 1995-05 | |
| High resolution transmission electron microscopy study on the microstructures of aluminum nitride and hydrogenated aluminum nitride films prepared by radio frequency reactive sputtering Yong, YJ; Lee, JeongYong; Kim, HS, APPLIED PHYSICS LETTERS, v.71, pp.1489 - 1491, 1997-12 |