Showing results 1 to 6 of 6
A Printable Form of Single-Crystalline Gallium Nitride for Flexible Optoelectronic Systems Lee, Keonjae; Lee, Jaeseob; Hwang, Heedon; Reitmeier, Zachary J.; Davis, Robert F.; Rogers, John A.; Nuzzo, Ralph G., SMALL, v.1, no.12, pp.1164 - 1168, 2005-07 |
Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM; Sharma, N; Humphreys, C, JOURNAL OF CRYSTAL GROWTH, v.231, no.4, pp.466 - 473, 2001-11 |
Properties of reactively sputtered WNx as Cu diffusion barrier Suh, BS; Lee, YJ; Hwang, JS; Park, Chong-Ook, THIN SOLID FILMS, v.348, no.1-2, pp.299 - 303, 1999-07 |
Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Jeon, SR; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.233, no.4, pp.667 - 672, 2001-12 |
Synergy of atom-probe structural data and quantum-mechanical calculations in a theory-guided design of extreme-stiffness superlattices containing metastable phases![]() Friák, M; Tytko, D; Holec, D; Choi, Pyuck-Pa; Eisenlohr, P; Raabe, D; Neugebauer, J, NEW JOURNAL OF PHYSICS, v.17, 2015-09 |
원료물질에 따른 실리콘 질화막의 원자층 증착 특성 비교 이원준; 이주현; 이연승; 나사균; 박종욱, 한국재료학회지, v.14, no.2, pp.141 - 145, 2004-02 |
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