Showing results 1 to 5 of 5
Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor Kang, KyongTae; Kim, Il-Doo; Lim, Mi-Hwa; Kim, Ho Gi; Hong, Jae-Min, THIN SOLID FILMS, v.516, no.6, pp.1218 - 1222, 2008-01 |
Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator Kim, YB; Kim, JU; Choi, DK; Hong, JM; Kim, Il-Doo, JOURNAL OF ELECTROCERAMICS, v.23, pp.76 - 79, 2009-08 |
High-performance solution-processed triisopropylsilylethynyl pentacene transistors and inverters fabricated by using the selective self-organization technique Kim, Se Hyun; Choi, Danbi; Chung, Dae Sung; Yang, Chanwoo; Jang, Jaeyoung; Park, Chan Eon; Park, Sang-Hee Ko, APPLIED PHYSICS LETTERS, v.93, no.11, 2008-09 |
Low Voltage Operating InGaZnO4 Thin Film Transistors with Sputter-Deposited PMMA/High-k BST Stacked Gate Dielectric Layers Kim, Dong-Hun; Cho, Nam-Gyu; Kim, Ho-Gi; Kim, Il-Doo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.11, pp.370 - 372, 2010 |
Novel Electronics for Flexible and Neuromorphic Computing Lee, Haneol; Park, Jung Hwan; Kim, Tae Jin; Im, Doyoung; Shin, Jung Ho; Kim, Do Hyun; Mohammad, Baker; et al, ADVANCED FUNCTIONAL MATERIALS, v.28, no.32, 2018-08 |
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