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Showing results 1 to 4 of 4

1
Cobalt metallorganic chemical vapor deposition and formation of epitaxial CoSi2 layer on Si(100) substrate

Rhee, HS; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.7, pp.2720 - 2724, 1999-07

2
Epitaxial growth of a (100) CoSi2 layer from carbonic cobalt films deposited on (100) Si substrate using an organometallic source

Rhee, HS; Jang, TW; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.74, no.7, pp.1003 - 1005, 1998-12

3
Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt-carbon films on (100) Si substrate

Rhee, HS; Ahn, Byung Tae; Sohn, DK, JOURNAL OF APPLIED PHYSICS, v.86, no.6, pp.3452 - 3459, 1999-09

4
In situ growth of an epitaxial CoSi2 layer on a Si(100) substrate by reactive chemical-vapor deposition using a cobalt metallorganic source

Rhee, HS; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.74, no.21, pp.3176 - 3178, 1999-05

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