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Epitaxial growth of GaN on LaAlO3(100) substrate by RF plasma assisted molecular beam epitaxy Lee, JJ; Kang, KY; Park, YS; Yang, CS; Kim, HS; Kim, KH; Kang, TW; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.38, no.11, pp.6487 - 6488, 1999-11 |
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