Browse "MS-Journal Papers(저널논문)" by Subject InAs source/drain
Showing results 1 to 1 of 1
| In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth Singisetti, Uttam; Wistey, Mark A.; Burek, Gregory J.; Baraskar, Ashish K.; Thibeault, Brian J.; Gossard, Arthur C.; Rodwell, Mark J. W.; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.11, pp.1128 - 1130, 2009-11 |
Discover
Open Access
- 265 OA Article
Date issued
- 1,014 2020 - 2024
- 2,625 2010 - 2019
- 2,168 2000 - 2009
- 1,240 1990 - 1999
- 179 1980 - 1989