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Browse "MS-Journal Papers(저널논문)" by Subject INGAN

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Showing results 1 to 4 of 4

1	Formation of misfit dislocations and stacking faults in high indium content InxGa1-xN layers grown by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.165 - 169, 2001-12
2	Homogeneity and composition of AlInGaN: A multiprobe nanostructure study Krause, Florian F; Ahl, Jan-Philipp; Tytko, Darius; Choi, Pyuck-Pa; Egoavil, Ricardo; Schowalter, Marco; Mehrtens, Thorsten; et al, ULTRAMICROSCOPY, v.156, pp.29 - 36, 2015-09
3	Phase separation and stacking fault of InxGa1-xN layers grown on thick GaN and sapphire substrate by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.220, no.3, pp.197 - 203, 2000-12
4	Superlattice-like stacking fault and phase separation of InxGa1-xN grown on sapphire substrate by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, APPLIED PHYSICS LETTERS, v.77, no.2, pp.247 - 249, 2000-07

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