Browse "MS-Journal Papers(저널논문)" by Subject Atomic layer deposition (ALD)
Showing results 1 to 4 of 4
| A highly bendable thin film encapsulation by the modulation of thermally induced interfacial residual stress Park, Yong Cheon; Kim, Taehyun; Shim, Hye Rin; Choi, YoungWoo; Hong, Seungbum; Yoo, Seunghyup; Im, Sung Gap, APPLIED SURFACE SCIENCE, v.598, 2022-10 |
| Characteristics of SiO2 film grown by atomic layer deposition as the gate insulator of low-temperature polysilicon thin-film transistors Lee, W.-J.; Chun, M.-H.; Cheong, K.-S.; Park, K.-C.; Park, Chong-Ook; Cao, G.; Rha, S.-K., DIFFUSION AND DEFECT DATA PT.B: SOLID STATE PHENOMENA, v.124-126, no.PART 1, pp.247 - 250, 2007 |
| Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric Bentley, Steven J.; Holland, Martin; Li, Xu; Paterson, Gary W.; Zhou, HP; Ignatova, Olesya; Thoms, Stephen; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.494 - 496, 2011-04 |
| Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3 Park, Kwangchol; Yun, Won-Deok; Choi, Byoung-Jun; Kim, Heon-Do; Lee, Won-Jun; Rha, Sa-Kyun; Park, Chong-Ook, THIN SOLID FILMS, v.517, no.14, pp.3975 - 3978, 2009-05 |
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