Browse "MS-Journal Papers(저널논문)" by Author Yu, Byoung-Gon

Showing results 1 to 4 of 4

1
Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate

Yoon, Sung-Min; Jung, Soon-Won; Yang, Shinhyuk; Park, Sang-Hee Ko; Yu, Byoung-Gon; Ishiwara, Hiroshi, CURRENT APPLIED PHYSICS, v.11, no.3, pp.219 - 224, 2011-05

2
Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

Yoon, Sung-Min; Yang, Shin-Hyuk; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; et al, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.24, 2009-12

3
Effects of barrier layers on the electrical behaviors of phase-change memory devices using Sb-rich Ge-Sb-Te films

Yoon, Sung-Min; Choi, Kyu-Jeong; Park, Sang-Hee Ko; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon, INTEGRATED FERROELECTRICS, v.93, no.1, pp.75 - 82, 2007

4
Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chun-Won; Jung, Soon-Won; Ryu, Min-Ki; Park, Sang-Hee Ko; Kim, ByeongHoon; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.26, no.3, 2011-03

Discover

Type

Open Access

Date issued

. next

Subject

. next

rss_1.0 rss_2.0 atom_1.0