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Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (111) substrates by using hydride vapor-phase epitaxy

Lee, K. H.; Lee, JeongYong; Kwon, Y. H.; Ryu, S. Y.; Kang, T. W.; Yoo, C. H.; Lee, D. U.; et al, JOURNAL OF CRYSTAL GROWTH, v.311, no.2, pp.244 - 248, 2009-01

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