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Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium Park, SJ; Ro, JR; Ha, JS; Kim, SB; Park, HyoHoon; Lee, EH; Yi, JY; et al, SURFACE SCIENCE, v.350, no.1-3, pp.221 - 228, 1996-04 |
Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition Kim, Y; Park, KH; Chung, TH; Bark, HJ; Yi, JY; Choi, WC; Kim, EK; et al, APPLIED PHYSICS LETTERS, v.78, no.7, pp.934 - 936, 2001-02 |
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