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Effects of post annealing and oxidation processes on the removal of damage generated during the shallow trench etch process Lee, YJ; Hwang, SW; Oho, KH; Lee, JeongYong; Yeom, GY, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.12B, pp.6916 - 6921, 1998-12 |
Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl-2/N-2 and Cl-2/HBr plasmas Lee, JeongYong; Hwang, SW; Yeom, GY; Lee, JW; Lee, JY, THIN SOLID FILMS, v.341, no.1-2, pp.168 - 171, 1999-03 |
Study of shallow silicon trench etch process using planar inductively coupled plasmas Lee, JH; Yeom, GY; Lee, JW; Lee, JeongYong, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.15, no.3, pp.573 - 578, 1997-12 |
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