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Characteristics of SiO2 film grown by atomic layer deposition as the gate insulator of low-temperature polysilicon thin-film transistors

Lee, W.-J.; Chun, M.-H.; Cheong, K.-S.; Park, K.-C.; Park, Chong-Ook; Cao, G.; Rha, S.-K., DIFFUSION AND DEFECT DATA PT.B: SOLID STATE PHENOMENA, v.124-126, no.PART 1, pp.247 - 250, 2007

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