Browse "MS-Journal Papers(저널논문)" by Author Holland, Martin
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| Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric Bentley, Steven J.; Holland, Martin; Li, Xu; Paterson, Gary W.; Zhou, HP; Ignatova, Olesya; Thoms, Stephen; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.494 - 496, 2011-04 |
| III-V nMOSFETs - Some issues associated with roadmap worthiness (invited) Thayne, Iain; Bentley, Steven; Holland, Martin; Jansen, Wout; Li, Xu; Macintyre, Douglas; Thoms, Stephen; et al, MICROELECTRONIC ENGINEERING, v.88, no.7, pp.1070 - 1075, 2011-07 |
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