Showing results 1 to 11 of 11
Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving Im, Youngjun; Cho, Seong-In; Kim, Jingyu; Woo, Namgyu; Ko, Jong Beom; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.44, no.11, pp.1849 - 1852, 2023-11 |
Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure Kim, Junsung; Kim, Do Hyung; Cho, Seong-In; Lee, Seung Hee; Jeong, Wooseok; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.42, no.12, pp.1798 - 1801, 2021-12 |
Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors Jeon, Sori; Lee, Kwang-Heum; Lee, Seung-Hee; Cho, Seong-In; Hwang, Chi-Sun; Ko, Jong Beom; Park, Sang-Hee Ko, JOURNAL OF MATERIALS CHEMISTRY C, v.11, no.41, pp.14177 - 14186, 2023-10 |
Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors Ko, Jong Beom; Cho, Seong-In; Park, Sang-Hee Ko, ACS APPLIED MATERIALS & INTERFACES, v.15, no.40, pp.47799 - 47809, 2023-09 |
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs Cho, Seong-In; Woo, Namgyu; Jeong, Hyun-Jun; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.44, no.4, pp.650 - 653, 2023-04 |
Modifying subgap states with hydrogen incorporation from source/drain alloys for oxide phototransistors Jeong, Wooseok; Cho, Seong-In; Park, Sang-Hee Ko; Ko, Jong Beom, MATERIALS LETTERS, v.355, 2024-01 |
Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT Woo, Namgyu; Cho, Seong-In; Park, Sang-Hee Ko, ADVANCED MATERIALS INTERFACES, v.10, no.12, 2023-04 |
Rapid and simultaneous multiple detection of a tripledemic using a dual-gate oxide semiconductor thin-film transistor-based immunosensor Jeong, Sehun; Kim, Jingyu; Cho, Seong-In; Kang, Taejoon; Kim, Sunjoo; Lim, Eun-Kyung; Park, Sang-Hee Ko, BIOSENSORS & BIOELECTRONICS, v.241, 2023-12 |
Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator Cho, Seong-In; Ko, Jong Beom; Lee, Seung Hee; Kim, Junsung; Park, Sang-Hee Ko, JOURNAL OF ALLOYS AND COMPOUNDS, v.893, 2022-02 |
Synaptic transistors with human brain-like fJ energy consumption via double oxide semiconductor engineering for neuromorphic electronics Cho, Seong-In; Jeon, Jae Bum; Kim, Joo Hyung; Lee, Seung Hee; Jeong, Wooseok; 김진규; Kim, Geunyoung; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.9, no.32, pp.10243 - 10253, 2021-08 |
Trench-Structured High-Current-Driving Aluminum-Doped Indium-Tin-Zinc Oxide Semiconductor Thin-Film Transistor Kim, Do Hyung; Lee, Kwang-Heum; Lee, Seung Hee; Kim, Junsung; Yang, Junghoon; Kim, Jingyu; Cho, Seong-In; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.10, pp.1677 - 1680, 2022-10 |
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