Showing results 1 to 13 of 13
Characterization on Bandedge Electronic Structure of MgO Added Bi1.5Zn1.0Nb1.5O7 Gate Dielectrics for ZnO-Thin Film Transistors Cho, Nam-Gyu; Seo, Hyung-Tak; Kim, Dong-Hun; Kim, Ho-Gi; Kim, Jin-Woo; Kim, Il-Doo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.1, pp.G4 - G7, 2011 |
Facile Synthesis of Pt-Functionalized SnO2 Hollow Hemispheres and Their Gas Sensing Properties Cho, Nam-Gyu; Whitfield, George C.; Yang, Dae-Jin; Kim, Ho-Gi; Tuller, Harry L.; Kim, Il-Doo, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.12, pp.435 - 439, 2010 |
Gas sensing properties of p-type hollow NiO hemispheres prepared by polymeric colloidal templating method Cho, Nam-Gyu; Hwang, In-Sung; Kim, Ho-Gi; Lee, Jong-Heun; Kim, Il-Doo, SENSORS AND ACTUATORS B-CHEMICAL, v.155, no.1, pp.366 - 371, 2011-07 |
High Stability InGaZnO4 Thin-Film Transistors Using Sputter-Deposited PMMA Gate Insulators and PMMA Passivation Layers Kim, Dong-Hun; Choi, Seung-Hoon; Cho, Nam-Gyu; Chang, Young-Eun; Kim, Ho-Gi; Hong, Jae-Min; Kim, Il-Doo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.296 - 298, 2009 |
Highly sensitive SnO2 hollow nanofiber-based NO2 gas sensors Cho, Nam-Gyu; Yang, Dae-Jin; Jin, Mi-Jin; Kim, Ho-Gi; Tuller, Harry L.; Kim, Il-Doo, SENSORS AND ACTUATORS B-CHEMICAL, v.160, no.1, pp.1468 - 1472, 2011-12 |
Highly Transparent InGaZnO4 Thin Film Transistors Using Indium-Doped ZnO Electrodes on Plastic Substrate Kim, Dong-Hun; Cho, Nam-Gyu; Kim, Ho-Gi; Kim, Il-Doo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.6, pp.198 - 201, 2009 |
InGaZnO4-Based Thin Film Transistors Using Room-Temperature Grown Mg2Hf5O12 Gate Insulator Kim, Dong-Hun; Seo, Hyung-Tak; Chung, Kwun-Bum; Cho, Nam-Gyu; Kim, Ho-Gi; Kim, Il-Doo, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.10, pp.964 - 968, 2010-01 |
Low voltage operating InGaZnO(4) thin film transistors using high-k MgO-Ba(0.6)Sr(0.4)TiO(3) composite gate dielectric on plastic substrate Kim, Dong-Hun; Cho, Nam-Gyu; Kim, Ho-Gi; Kim, Hyun-Suk; Kim, Il-Doo, APPLIED PHYSICS LETTERS, v.93, no.3, 2008-07 |
Low Voltage Operating InGaZnO4 Thin Film Transistors with Sputter-Deposited PMMA/High-k BST Stacked Gate Dielectric Layers Kim, Dong-Hun; Cho, Nam-Gyu; Kim, Ho-Gi; Kim, Il-Doo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.11, pp.370 - 372, 2010 |
Structural and electrical properties of indium doped ZnO thin films fabricated by RF magnetron sputtering Kim, Dong-Hun; Cho, Nam-Gyu; Kim, Ho-Gi; Choi, Won-Youl, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.11, pp.H939 - H943, 2007 |
Structural and electrical properties of Sb-doped p-type ZnO thin films fabricated by RF magnetron sputtering Kim, Dong-Hun; Cho, Nam-Gyu; Kim, Kyoung-Sun; Han, Seung-Ho; Kim, Ho Gi, JOURNAL OF ELECTROCERAMICS, v.22, no.1-3, pp.82 - 86, 2009-02 |
Thickness Dependence of Gate Dielectric and Active Semiconductor on InGaZnO(4) TFT Fabricated on Plastic Substrates Kim, Dong-Hun; Cho, Nam-Gyu; Han, Seung-Ho; Kim, Ho-Gi; Kim, Il-Doo, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.12, pp.317 - 319, 2008 |
Zinc oxide thin film transistors using MgO-Bi1.5Zn1.0Nb1.5O7 composite gate insulator on glass substrate Cho, Nam-Gyu; Kim, Dong-Hun; Kim, Ho-Gi; Hong, Jae-Min; Kim, Il-Doo, THIN SOLID FILMS, v.518, no.10, pp.2843 - 2846, 2010-03 |
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