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Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)

Shin, Byungha; Cagnon, Joel; Long, Rathnait D.; Hurley, Paul K.; Stemmer, Susanne; McIntyre, Paul C., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.40 - 43, 2009

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