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THE EFFECT OF IN-SITU BORON DOPING ON THE STRAIN RELAXATION OF SI0.8GE0.2-B/SI HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY LEE, SC; YUN, SJ; Lee, JeongYong, JOURNAL OF CRYSTAL GROWTH, v.150, no.1-4, pp.999 - 1004, 1995-05 |
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