Browse "MS-Journal Papers(저널논문)" by Subject STRESS
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| On Local Phase Equilibria and the Appearance of Nanoparticles in the Microstructure of Single-Crystal Ni-Base Superalloys Yardley, Victoria; Povstugar, Ivan; Choi, Pyuck-Pa; Raabe, Dirk; Parsa, Alireza B.; Kostka, Aleksander; Somsen, Christoph; et al, ADVANCED ENGINEERING MATERIALS, v.18, no.9, pp.1556 - 1567, 2016-09 |
| Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al2O3/SiNx Gate Insulator Kim, Yujin; Lee, Kwang Heum; Mun, Geumbi; Park, Kyeongwoo; Park, Sang-Hee Ko, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.214, no.12, 2017-12 |
| Particle size induced diffuse phase transition in the fine particle barium titanate porcelains Kim, Ho Gi, JOURNAL OF PHYSICS-CONDENSED MATTER, v.9, no.43, pp.9445 - 9456, 1997-01 |
| Platinum bottom electrodes formed by electron-beam evaporation for high-dielectric thin films Lee, Hee Chul; Kim, Ho Gi, JAPANESE JOURNAL OF APPLIED PHYSICS, v.34, no.9B, pp.5220 - 5223, 1995-01 |
| Recrystallization as a Growth Mechanism for Whiskers on Plastically Deformed Sn Films Chang, Jaewon; Kang, Sung K.; Lee, Jae-Ho; Kim, Keun-Soo; Lee, Hyuck Mo, JOURNAL OF ELECTRONIC MATERIALS, v.44, no.10, pp.3486 - 3499, 2015-10 |
| Recrystallization-induced void migration in electroplated Cu films Kim, Sung-Hwan; Yu, Jin, SCRIPTA MATERIALIA, v.67, no.4, pp.312 - 315, 2012-08 |
| Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator Cho, Seong-In; Ko, Jong Beom; Lee, Seung Hee; Kim, Junsung; Park, Sang-Hee Ko, JOURNAL OF ALLOYS AND COMPOUNDS, v.893, 2022-02 |
| Role of samarium additions on the shape memory behavior of iron based alloys Shakoor, R. A.; Khalid, F. Ahmad; Kang, Kisuk, MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, v.528, no.6, pp.2299 - 2302, 2011-11 |
| STRUCTURAL AND OPTICAL-PROPERTIES OF A STRAINED CDTE/GAAS HETEROSTRUCTURE GROWN BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION AT LOW-TEMPERATURE KIM, TW; PARK, HL; Lee, JeongYong, THIN SOLID FILMS, v.259, no.2, pp.253 - 258, 1995-04 |
| Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density Cho, HK; Lee, JeongYong; Choi, SC; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.222, no.1-2, pp.104 - 109, 2001-01 |
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