Browse "MS-Journal Papers(저널논문)" by Subject MAGNETORESISTANCE

Showing results 10 to 18 of 18

10
Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers

Park, Byong Guk; Lee, Taek Dong; Lee, TH; Kim, CG; Kim, CO, JOURNAL OF APPLIED PHYSICS, v.93, pp.6423 - 6425, 2003-05

11
Material and Thickness Investigation in Ferromagnet/Ta/CoFeB Trilayers for Enhancement of Spin-Orbit Torque and Field-Free Switching

Oh, Young Wan; Ryu, Jeongchun; Kang, Jaimin; Park, Byong-Guk, ADVANCED ELECTRONIC MATERIALS, v.5, no.12, pp.1900598, 2019-12

12
Microstructural observation on effect of oxidation method of AlOx in magnetic tunnel junction by high resolution transmission electron microscopy

Bae, JS; Shin, KH; Lee, HyuckMo, JOURNAL OF APPLIED PHYSICS, v.91, no.10, pp.7947 - 7949, 2002

13
Orbital torque in magnetic bilayers

Lee, Dongjoon; Go, Dongwook; Park, Hyeon-Jong; Jeong, Wonmin; Ko, Hye-Won; Yun, Deokhyun; Jo, Daegeun; et al, NATURE COMMUNICATIONS, v.12, no.1, 2021-11

14
Structural analysis of the CoFeB thin film in Ru/CoFeB and MgO/CoFeB layers

Kim, Dong Joon; Bae, Ji Young; Lim, Woo Chang; Kim, Kee Won; Lee, Taek Dong, JOURNAL OF APPLIED PHYSICS, v.101, no.9, pp.09B505 - 09B505, 2007-09

15
Study of the effect of natural oxidation and thermal annealing on microstructures of AlOx in the magnetic tunnel junction by high-resolution transmission electron microscopy

Bae, JS; Shin, KH; Lee, Taek Dong; Lee, HyuckMo, APPLIED PHYSICS LETTERS, v.80, no.7, pp.1168 - 1170, 2002

16
Substrate Biasing Effect during MgO Deposition in CoFeB/MgO/CoFeB MTJs

Choi, G. M.; Shin, K. H.; Seo, S. A.; Kim, S. O.; Lim, W. C.; Lee, Taek Dong, IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2371 - 2373, 2009-06

17
Thermal stability of the exchanged biased CoFe/IrMn electrode for the magnetic tunnel junction as a function of CoFe thickness

Lee, JH; Kim, SJ; Yoon, CS; Kim, CK; Park, Byong Guk; Lee, Taek Dong, JOURNAL OF APPLIED PHYSICS, v.92, no.10, pp.6241 - 6244, 2002-11

18
Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor

Park, Byong Guk; Banerjee, T; Min, BC; Lodder, JC; Jansen, R, PHYSICAL REVIEW B, v.73, no.17, 2006-05

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