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Showing results 3 to 6 of 6

3
Microstructural and compositional modification of In0.53Ga0.47As/In0.52Al0.48As multiquantum wells using rapid thermal annealing process

Jang, Y. O.; Lee, JeongYong, MATERIALS SCIENCE AND TECHNOLOGY, v.27, no.8, pp.1299 - 1302, 2011-08

4
Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers

Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD; et al, SOLID STATE COMMUNICATIONS, v.118, no.9, pp.465 - 468, 2001-05

5
Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1-xAs/GaAs heterostructures

Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Jung, M; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.8, pp.5195 - 5199, 2002-04

6
Microstructural properties of closely stacked InAs quantum dots inserted in GaAs layers embedded in modulation-doped Al0.25Ga0.75As/GaAs heterostructures

Lee, HS; Lee, JeongYong; Lee, DU; Choo, DC; Kim, TW; Kim, MD, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, pp.115 - 118, 2002-01

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