Showing results 10 to 21 of 21
Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy Heo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JeongYong; Jeong, JC, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, pp.154 - 159, 2003-07 |
Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p-InP (100) substrates Yuk, Jong Min; Lee, Jeong-Yong; No, Y. S.; Kim, T. W.; Choi, W. K., JOURNAL OF APPLIED PHYSICS, v.103, no.8, 2008-04 |
Formation process and lattice parameter of InAs/GaAs quantum dots Kim, MD; Lee, HS; Lee, JeongYong; Kim, TW; Yoo, KH; Kim, GH, JOURNAL OF MATERIALS SCIENCE LETTERS, v.22, pp.1767 - 1770, 2003-12 |
Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD; Cho, SM; Kwon, YJ; Oh, JE, APPLIED PHYSICS LETTERS, v.88, pp.380 - 388, 2006-06 |
InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates Lee, MS; Kim, EK; Kim, SI; Hwang, SM; Kim, CK; Min, SK; Lee, JeongYong, SOLID STATE COMMUNICATIONS, v.101, no.9, pp.705 - 708, 1997-03 |
Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD, APPLIED PHYSICS LETTERS, v.79, no.1, pp.33 - 35, 2001-07 |
Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD; et al, SOLID STATE COMMUNICATIONS, v.118, no.9, pp.465 - 468, 2001-05 |
Microstructural properties of closely stacked InAs quantum dots inserted in GaAs layers embedded in modulation-doped Al0.25Ga0.75As/GaAs heterostructures Lee, HS; Lee, JeongYong; Lee, DU; Choo, DC; Kim, TW; Kim, MD, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, pp.115 - 118, 2002-01 |
Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD Kim, Dong Chan; Kong, Bo Hyun; Jun, Sang Ouk; Cho, Hyung Koun; Park, Dong Jun; Lee, JeongYong, THIN SOLID FILMS, v.516, no.16, pp.5562 - 5566, 2008-06 |
Strucrural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates Noh, YK; Hwang, YJ; Kim, MD; Kwon, YJ; Oh, JE; Kim, Y.H; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1929 - 1932, 2007-06 |
Structural and stimulated emission characteristics of diameter-controlled ZnO nanowires using buffer structure Lee, Sang Hyun; Lee, Seogwoo; Ha, Jun-Seok; Lee, Hyo-Jong; Lee, Jae Wook; Lee, JeongYong; Hong, Soon-Ku; et al, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.22, 2009-11 |
Surface morphology and domain structure during the evolution of ZnO nanorods into films Park, Dong Jun; Lee, JeongYong; Kim, Dong Chan; Cho, Hyung Koun, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.3, 2009-02 |
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