Showing results 1 to 7 of 7
Dislocation reduction in GaN epilayers by maskless Pendeo-epitaxy process Park, DJ; Lee, JeongYong; Cho, HK; Hong, CH; Cheong, HS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.1253 - 1256, 2004-11 |
Effects of growth interruption on high indium content InGaN/GaN multi quantum wells Cheong, MG; Choi, RJ; Kim, CS; Yoon, HS; Hong, CH; Suh, EK; Lee, HJ; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.38, no.6, pp.701 - 705, 2001-06 |
Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications Kim, KS; Hong, CH; Lee, WH; Kim, CS; Cha, OH; Yang, GM; Suh, EK; et al, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.5, pp.11 - 74, 2000-01 |
Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures Kim, CS; Hong, YK; Hong, CH; Suh, EK; Lee, HJ; Kim, MH; Cho, HK; et al, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.183 - 186, 2001-11 |
Nano-scale island (dot)-induced optical emission in InGaN quantum wells Kim, KS; Lee, WH; Kim, CS; Yang, GM; Hong, CH; Suh, EK; Lim, KY; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.141 - 146, 2001-07 |
Structural properties of GaN grown by pendeo-epitaxy with in-doping Hong, YK; Kim, CS; Jung, HS; Hong, CH; Kim, MH; Leem, SJ; Cho, HK; et al, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.235 - 238, 2001-11 |
Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells Lee, WH; Kim, KS; Yang, GM; Hong, CH; Lim, KY; Suh, EK; Lee, HJ; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.136 - 140, 2001-07 |
Discover