Showing results 3 to 6 of 6
Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure Kim, Junsung; Kim, Do Hyung; Cho, Seong-In; Lee, Seung Hee; Jeong, Wooseok; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.42, no.12, pp.1798 - 1801, 2021-12 |
Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors Jeon, Sori; Lee, Kwang-Heum; Lee, Seung-Hee; Cho, Seong-In; Hwang, Chi-Sun; Ko, Jong Beom; Park, Sang-Hee Ko, JOURNAL OF MATERIALS CHEMISTRY C, v.11, no.41, pp.14177 - 14186, 2023-10 |
Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors Ko, Jong Beom; Cho, Seong-In; Park, Sang-Hee Ko, ACS APPLIED MATERIALS & INTERFACES, v.15, no.40, pp.47799 - 47809, 2023-09 |
High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance Kim, S. -Y.; Kim, K.; Hwang, Y. H.; Park, J.; Jang, J.; Nam, Yunyong; Kang, Y.; et al, NANOSCALE, v.8, no.39, pp.17113 - 17121, 2016-09 |
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