Showing results 1 to 4 of 4
Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor Kang, KyongTae; Kim, Il-Doo; Lim, Mi-Hwa; Kim, Ho Gi; Hong, Jae-Min, THIN SOLID FILMS, v.516, no.6, pp.1218 - 1222, 2008-01 |
High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates Kang, KyongTae; Lim, Mi-Hwa; Kim, Ho Gi; Kim, Il-Doo; Hong, Jae-Min, APPLIED PHYSICS LETTERS, v.90, no.4, pp.1013 - 1017, 2007-01 |
Influence of narrow transverse slit in ferroelectric based voltage tunable phase shifter Kim, Il-Doo; Park, Jeong-Ho; Lim, Mi-Hwa; Kim, Myung-Sun; Kim, Ho-Gi; Yoon, Soon-Gil; Kim, Ki-Byoung; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.41, no.11B, pp.7218 - 7221, 2002-11 |
Low leakage current-stacked MgO/Bi1.5Zn1.0Nb1.5O7 gate insulator - for low voltage ZnO thin film transistors Lim, Mi-Hwa; Kang, KyongTae; Kim, Ho Gi; Kim, Il-Doo; Choi, YongWoo; Tuller, Harry L., APPLIED PHYSICS LETTERS, v.89, no.20, 2006-11 |
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