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The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/gaN Multi-Layers H.S. Kim; J.J. Lee; S.Y. jeong; Lee, JeongYong; J.Y. Lin; H.X. Jiang, KOREAN JOURNAL OF MATERIALS RESEARCH, v.12, no.3, pp.190 - 194, 2002 |
The Structural Properties of Epitaxial GaN Films Growth on LaAlO3(100) Substrates J.J. Lee; K.Y. Kang; Y.S. Park; C.S. Yang; H.S. Kim; K.H. Kim; T.W. Kang; et al, 응용물리, v.12, no.3, pp.202 - 206, 1999-12 |
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