Showing results 1 to 1 of 1
Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory Kim, Moon-Seok; Hwang, Young-Hwan; Kim, Sung-Ho; Guo, Zheng; Moon, Dong-Il; Choi, Ji-Min; Seol, Myeong-Lok; et al, APPLIED PHYSICS LETTERS, v.101, no.24, 2012-12 |
Discover